Study of graphene field-effect transistors under electrostatic discharge stresses

Shurong Dong,Lei Zhong,Jie Zeng,Wei Guo,Hongwei Li,Jun Wang, Zhiguang Guo,J J Liou

Electronics Letters（2013）

引用 0|浏览13

暂无评分

摘要

Graphene field-effect transistors (GFETs) are characterised for the first time under electrostatic discharge stresses. The GFETs are measured from the transmission line pulsing (TLP) tester and very fast TLP (VFTLP) tester. The turn-on behaviour influenced by back gate voltage is investigated. The I-V curve of the GFETs shows no characteristic of snapback from TLP or VFTLP measurement.

查看译文

关键词

electrostatic discharge,field effect transistors,graphene,semiconductor device testing,transmission lines,gfet,i-v curve,vftlp measurement,back gate voltage,electrostatic discharge stresses,graphene field-effect transistors,transmission line pulsing tester,turn-on behaviour,very fast tlp tester

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要