Optimization of implant and anneal processes

S Prussin,Jason Reyes,Hiroshi Onoda,Nariaki Hamamoto,Tsutomu Nagayama,Masayasu Tanjyo,Sei Umisedo,Yuichi Kawamura,Masashi Hashimoto,Yuji Koga,N Maehara,Yoshiki Nakashima,H Yoshimi, S Sezaki, M I Current

Advanced Thermal Processing of Semiconductors（2010）

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摘要

A method of choosing a coupled pair of a doping process and an annealing process that is optimized on the basis of the Rs·xj figure of merit. Differential Hall effect evaluations are used to measure 1/μdef, the defect scatter contribution to the mobility. Supressing 1/μdef leads to optimization of the doping process-annealing process couple.

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关键词

hall effect,annealing,boron compounds,doping,ion implantation,ion mobility,bf2,doping process,figure of merit

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