Fabrication of stress-induced self-rolled metal/insulator bifilm microtube with micromesh walls

Solid-State Sensors, Actuators and Microsystems(2013)

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摘要
A metal/insulator bifilm microtube with micromesh walls was constructed using a stress-assisted self-rolled-up technology. The Pt/Ti/SiO2 microtube with mesh-sidewalls was self-formed by a tensile-stressed metal/insulator thin film through the release of planar micromesh from the silicon substrate by removing underlying sacrificial silicon structures. The metal pads interconnect electrically and support mechanically the freestanding self-rolled microtube. The electrical conductance was measured to show small thermal mass and good thermal isolation properties of the microtube. The diameter of self-rolled microtube is around 25 μm. The beam width and the size of micromesh walls were 0.6 μm and 5 μm, respectively. Thickness of Pt layer and SiO2 layer was both 100 nm.
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electrical conductivity,insulating thin films,internal stresses,metal-insulator boundaries,metallic thin films,micromechanical devices,platinum,silicon compounds,titanium,pt-ti-sio2,si,electrical conductance,metal pads,micromesh walls,planar micromesh,silicon substrate,size 0.6 mum to 5 mum,size 100 nm,stress-assisted self-rolled-up technology,stress-induced self-rolled metal/insulator bifilm microtube,thermal isolation properties,thermal mass,metal/insulator bifilms,micromesh,microtube,self-rolling,thin-film stress
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