Pirani gauge based on alternative self-heating of silicon nanowire

Ruellan, J.,Arcamone, J.,Mercier, D.,Dupre, C.

Solid-State Sensors, Actuators and Microsystems（2013）

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摘要

This work reports on the realization of the smallest Pirani gauge ever, based upon highly-doped silicon nanowires. This paper details the fabrication process and the characterization of the thermal properties of Si nanowires, such as thermal conductivity and thermal coefficient of resistivity for various working temperatures in the 300K-700K range. A dynamic transduction technique, based on the 3-omega measurement is described and the device performances (i.e. sensitivity and signal-to-noise ratio) are measured. With the tested devices a resolution below 5%/Hz1/2 is obtained in the 0.1mbar-1bar range.

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关键词

elemental semiconductors,nanofabrication,nanowires,pressure sensors,silicon,thermal conductivity,3- omega measurement,Pirani gauge,Si,alternative self-heating,dynamic transduction technique,fabrication process,highly-doped silicon nanowires,pressure 0.1 bar to 1 bar,sensitivity,signal-to-noise ratio,temperature 300 K to 700 K,thermal coefficient of resistivity,thermal conductivity,thermal properties,3-omega measurement,Pirani gauge,silicon nanowire,thermal conductivity,

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