Recorded low power dissipation of 0.14 mW/Gbps in 1060 nm VCSELs for “Green” optical interconnection

Semiconductor Laser Conference(2010)

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摘要
Extremely low power dissipation of 0.14 mW/Gbps at 10 Gbps operation with as small as 75 mVp-p of modulation amplitude has been achieved in carefully designed InGaAs/GaAs-MQW 1060 nm VCSELs employed double intra-cavity structure.
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gallium arsenide
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