Atomistic simulation on gate-recessed InAs/GaSb TFETs and performance benchmark

Zhengping Jiang,Yu He,Guangle Zhou,Tillmann Kubis,Huili Grace Xing,Gerhard Klimeck

Device Research Conference（2013）

引用 5|浏览11

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摘要

Fully atomistic simulations for realistically extended complex devices show the best performing SSmin. The L-shaped TFETs show best performance; however, their scaling is limited by the undercut. The ON currents in UTB TFETs are limited by source-gate coupling, which can be improved by including a doping layer. NW TFETs suffer from strong confinement effects, which reduce the ON current densities significantly. Wire diameters of more than 10 nm are required to get the broken-gap band alignment.

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关键词

iii-v semiconductors,field effect transistors,gallium compounds,indium compounds,semiconductor device testing,inas-gasb,tfet,utb,atomistic simulation,broken-gap band alignment,doping layer,source-gate coupling,electrostatics,tunneling,doping,benchmark testing,logic gates

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