RF Frequency Response of Photoconductive Samplers
Quantum Electronics, IEEE Journal of（2011）
摘要
We derive the microwave bandwidth of ultrafast optoelectronic samplers based on photoconducting switches, using a simple analytical model. The validity of this model is checked by measuring the bandwidth of semi-intrinsic and low-temperature-grown GaAs photoswitches. The bandwidth of such devices is limited by the response time of both the semiconductor material and the electrical circuit. The devices behave as low-pass filters exhibiting a -60 dB/decade slope.
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关键词
iii-v semiconductors,electro-optical switches,gallium arsenide,high-speed optical techniques,low-pass filters,microwave photonics,gaas,rf frequency response,microwave bandwidth,photoconducting switches,photoconductive samplers,photoswitches,ultrafast optoelectronic samplers,frequency response of optoelectronic devices,low-temperature-grown gaas,photoconductive devices,sampling methods,low pass filter,electrical circuit,frequency response,resistance,low pass filters,bandwidth,radio frequency,optical switches
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