A low-power supply-insensitive temperature sensor in 90nm CMOS process
Circuits and Systems（2013）
摘要
A low power and low voltage temperature sensor with power supply voltage insensitive improvement is presented in this paper. Compared to the conventional four-transistor temperature sensor, which has the power supply voltage sensitive problem, the linearity error of the proposed structure is reduced. The proposed temperature sensor is designed in TSMC 90nm 1P9M process and the nominal power supply voltage is 1V. The simulation results show that the linearity error of the proposed circuit is 0.29 °C and power consumption is 29μw. The linearity errors are 0.99°C and 2.8 °C under the 10% variation of the power supply voltage.
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关键词
cmos integrated circuits,power consumption,temperature sensors,cmos process,low voltage temperature sensor,low-power supply-insensitive temperature sensor,power supply voltage insensitive improvement,size 90 nm
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