Studying of InSb MOS capacitors for post CMOS application

Chang, E.Y.,Hai-Dang Trinh,Yueh-Chin Lin

Microelectronics Technology and Devices（2013）

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摘要

In this study, the properties of high-k/InSb are verified. The gate dielectrics including Al2O3 and HfO2 are used for studying. The band alignment of Al2O3/InSb and HfO2/InSb are estimated using x-ray photoelectron spectroscopy spectra and Fowler-Nordheim (F-N) current-voltage (I-V) characteristic. The effect of annealing temperatures on the electrical properties of the MOSCAPs is also studied. It is found that the In, Sb out diffusion into high-k would be a major reason to degrade the electrical properties of high k/InSb structures.

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关键词

cmos integrated circuits,mos capacitors,x-ray photoelectron spectra,aluminium compounds,annealing,electric properties,hafnium compounds,indium compounds,al2o3,al2o3-insb,f-n current-voltage characteristic,fowler-nordheim current-voltage characteristic,hfo2-insb,insb,moscaps,x-ray photoelectron spectroscopy spectra,annealing temperatures,band alignment,electrical properties,post cmos application,cmos,hfo2,sub-nanometter

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