Performance modeling for interconnects for conventional and emerging switches

System Level Interconnect Prediction(2013)

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摘要
This paper quantifies the challenges, limits, and opportunities of interconnects for evolutionary and revolutionary semiconductor technologies of the future. Various exploratory devices and the delays associated with their transport mechanisms are quantified. Graphene is selected as the interconnect material of choice because of its excellent transport properties over the conventional Cu/low-K: interconnects currently serving as the communication medium in integrated circuits. Compact models that describe the transport properties in graphene (electron mean free path, mobility, spin relaxation) are presented. These compact models are used to (i) evaluate the performance and energy-per-bit of graphene interconnects in electrical and spintronic domains and (ii) compare these metrics against those of conventional electrical interconnects at the end of silicon roadmap technology node (minimum feature size of 7.5 nm).
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关键词
carrier mobility,electron mean free path,graphene,integrated circuit interconnections,integrated circuit modelling,switches,C,electrical domains,electron mean free path,energy-per-bit,graphene interconnects,interconnects,mobility,performance modeling,spin relaxation,spintronic domains,switches,transport properties
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