InAs photodiode on semi-insulating GaAs substrate with Zn-diffusion guard-ring for high-speed and low dark current performance

J W Shi,F M Kuo,B R Huang,D I Lubyshev, J M Fastenau,W K Liu

Denver, CO（2010）

引用 2|浏览3

暂无评分

摘要

We demonstrate InAs photodiodes on semi-insulating GaAs substrate with Zn-diffusion guard-ring. It exhibits a 3-dB bandwidth as wide as 17 GHz under a small bias (-0.2V) with a reasonable dark current density (11A/cm2) at room temperature.

查看译文

关键词

iii-v semiconductors,diffusion,gallium arsenide,indium compounds,optical receivers,photodiodes,substrates,zinc,gaas,bandwidth 17 ghz,dark current density,photodiode,semi-insulating substrate,temperature 293 k to 298 k,zinc-diffusion guard-ring,room temperature,bandwidth,dark current

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要