A Novel Side-Gated Ultrathin-Channel Nanopore FET (SGNAFET) Sensor for Direct DNA Sequencing

Itaru Yanagi,Takeshi Oura,Takanobu Haga,Masahiko Ando,Jiro Yamamoto,Toshiyuki Mine,Takeshi Ishida,Toshiyuki Hatano,Rena Akahori,Takahide Yokoi,Takashi Anazawa,Yasushi Goto

The Japan Society of Applied Physics（2014）

引用 8|浏览16

暂无评分

摘要

A novel side-gated ultrathin-channel nanopore FET (SGNAFET), for fast and label-free DNA sequencing with high resolution and sensitivity, is proposed. The goal of the SGNAFET is to identify the four types of nucleotides in DNA by changes in the channel current of the SGNAFET. Aiming to reach that goal, a SGNAFET with channel thickness (tch.) of 2 or 4 nm was successfully operated and could detect DNA translocations through its nanopore on the basis of changes in its channel current.

查看译文

关键词

DNA,field effect transistors,nanoporous materials,SGNAFET sensor,channel current,channel thickness,direct DNA sequencing,nucleotides,side gated ultrathin channel nanopore FET,size 2 nm,size 4 nm

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要