Backside reflectance modulation of microscale metal interconnects

Teo, J.K.J.,Chua, C.M.,Koh, L.S.,Phang, J.C.H.

Reliability Physics Symposium（2011）

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摘要

The variation of backside reflectance modulation effects on metal line samples at different electrical bias and silicon backside thicknesses is investigated. Negative reflected intensity modulation is observed with temperature increase which is one to two orders of magnitude higher than published results. A backside reflectance model is developed to explain the experimental results.

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关键词

metallic thin films,modulation,reflectivity,silicon,backside reflectance modulation,electrical bias,microscale metal interconnects,negative reflected intensity modulation,silicon backside thicknesses,laser reflectance,metal interconnect,substrate thickness

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