Random telegraph noise in GaN-based light-emitting diodes
Electronics Letters（2011）
Abstract
Random telegraph noise (RTN) having two discrete current levels was characterised in reverse current of GaN based light-emitting diodes. Through compared magnitude of the hysteresis with RTN amplitude in reverse current, it is confirmed that RTN causes the current-voltage (I-V) hysteresis. The mechanism of RTN was analysed by using a tunnelling equation. In addition, activation energy of the trap leading to RTN was characterised by analysis of the time constants with voltage and temperature.
MoreTranslated text
Key words
gallium compounds,hysteresis,light emitting diodes,random noise,wide band gap semiconductors,gan,current-voltage hysteresis,light-emitting diodes,random telegraph noise,reverse current,tunnelling equation
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined