Two-Stage Degradation of p-Type Polycrystalline Silicon Thin-Film Transistors Under Dynamic Positive Bias Temperature Stress

Two-stage degradation of p-type polycrystalline silicon thin-film transistors under dynamic positive bias temperature (PBT) stress is reported for the first time. ON-state current (ION) gradually increases in the first degradation stage while dramatically drops in the second degradation stage, which are, respectively, due to the channel length shortening effect, caused by electrons trapping into the gate oxide, and grain boundary potential barrier buildup, caused by dynamic hot-carrier-induced traps generation. The transition from the first to the second degradation stage is clarified, in which the pulse peak duration plays a key role. Longer pulse peak duration is preferred to suppress the dynamic PBT stress-induced degradation.