AlGaInAs based photonic devices for high-speed data transmission

Tsuyoshi Yamamoto,Takasi Simoyama,Shinsuke Tanaka,Manabu Matsuda,Ayahito Uetake,Shigekazu Okumura,Mitsuru Ekawa,Ken Morito

Compound Semiconductor Week（2011）

引用 24|浏览19

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摘要

Recent results on 1.3-μm-wavelength directly-modulated lasers (DMLs) and semiconductor optical amplifiers (SOAs) using AlGaInAs multi-quantum well (MQW) active layers are reported. DMLs with the concept of distributed reflector structure provide four 25.8-Gbps lasers on LAN-WDM grid operating at 50°C using the same MQW active layers as well as 40-Gbps modulation at high temperatures. Using an AlGaInAs MQW SOA, a very compact module with low-power-consumption of 0.84W is realized.

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关键词

iii-v semiconductors,aluminium compounds,data communication equipment,distributed bragg reflector lasers,distributed feedback lasers,gallium compounds,high-speed optical techniques,indium compounds,integrated optics,integrated optoelectronics,laser beam applications,laser mirrors,local area networks,optical modulation,optical transmitters,quantum well lasers,semiconductor optical amplifiers,wavelength division multiplexing,algainas,lan-wdm grid,soa,bit rate 25.8 gbit/s,bit rate 40 gbit/s,distributed reflector structure,high-speed data transmission,integrated dbr mirrors,low-power-consumption module,multiquantum well active layers,photonic devices,power 0.84 w,temperature 50 degc,wavelength 1.3 mum,wavelength directly-modulated lasers,semiconductor optical amplifier,data transmission,modulation,fiber lasers

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