Tunable resistance switching characteristics in a thin FeOx- transition layer part II: Sweeping voltage controlling

Chang, Yao-Feng,Feng, Li-Wei,Chih-Wen Huang,Guo-Yuan Wu,Jiajiun Wu,Shinyuan Wang,Tingchang Chang,Chunyen Chang

Nanoelectronics Conference（2011）

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摘要

Multilevel resistance switching characteristics of the thin FeOx-transition layer were studies by controlling the maximum stopped voltage during reset process. It is obtained that the HRS is mainly influenced by the stopped voltage value, which is nearly independent to the LRS. Moreover, statistics of set and reset electrical parameters show that the possible switching process is localized, and also, the multiple resistive switching states in the TiN/SiO2/FeOx/Fe memristor could be approved.

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关键词

digital storage,iron,iron compounds,memristors,silicon compounds,switching circuits,titanium compounds,TiN-SiO2-FeOx-Fe,memristor,multilevel resistance switching,multiple resistive switching states,reset electrical parameters,set electrical parameters,stopped voltage value,sweeping voltage controlling,thin transition layer,tunable resistance switching

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