Investigation on the stoichiometric deviations of electrodeposited nano-CdTe compound by a novel numerical simulation

Nanoelectronics Conference(2011)

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摘要
A kinetic model for linear-sweep voltammetry has been developed and modified. The simulation of CdTe electrodeposition has been performed in the acidic electrolyte containing reducible ions of Cd2+ and HTeO2+, and the potential can be predicted to get good quality photosensitive material. A numerical simulation for the stoichiometric determination of electrodepo-sited CdTe thin film is presented for the first time, and the stoi-chiometric deviation can be controlled accurately. Well-connected granular CdTe thin films have been deposited at PPS, but are slightly p-type due to cadmium vacancies (VCd). In order to determine the stoichiometry of samples with a small deviation, it is necessary to decrease the concentration of HTeO2+. The stoi-chiometry deviations fall in the 50.001% range can be estimated. The control of stoichiometric deviation in Cd-rich is much better than in Te-rich by electrodeposited potential.
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关键词
cadmium compounds,electrodeposits,electrolytes,nanostructured materials,numerical analysis,semiconductor thin films,stoichiometry,voltammetry (chemical analysis),CdTe,acidic electrolyte,cadmium vacancies,electrodeposited cadmium telluride thin film,kinetic model,linear-sweep voltammetry,nanostructured material,numerical simulation,photosensitive material,stoichiometric determination,stoichiometric deviation,CdTe,electrodeposition,linear-sweep voltammetry,numerical simulation,stoichiometric deviation,
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