An InP MMIC Process Optimized for Low Noise at Cryo

P A Nilsson,Joel Schleeh,Niklas Wadefalk,J P Starski,H Rodilla,G Alestig,Jaana I Halonen,B Nilsson,Herbert Zirath,Jan Grahn

Compound Semiconductor Integrated Circuit Symposium（2014）

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摘要

An InP MMIC process was developed and optimized for ultra-low noise amplifiers (LNAs) operating at cryogenic temperature. The amplifiers from the process are working up to 100 GHz. The processed wafers are 4" and can carry more than 4000 3-stage units. For a significant number of 6-20 GHz 3-stage LNAs we have measured an average noise temperature of 5.8 K at ambient temperature of 10 K, state of the art in this frequency range, and 66.3 K at 300K. Associated gain was 35.9 dB (10K) and 33.2 dB (300 K). The standard deviation at room temperature for 47 LNAs was 1.5 K for the noise and 0.3 dB for the gain.

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关键词

iii-v semiconductors,mmic amplifiers,cryogenic electronics,indium compounds,low noise amplifiers,3-stage lnas,inp,mmic process,cryogenic temperature,frequency 6 ghz to 20 ghz,gain 0.3 db,gain 33.2 db,gain 35.9 db,temperature 1.5 k,temperature 10 k,temperature 293 k to 298 k,temperature 300 k,temperature 66.3 k,ultra-low noise amplifiers,cryogenic,gain,noise,mmic,cryogenics

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