Low Loss, High Performance 1-18 GHz SPDT Based on the Novel Super-Lattice Castellated Field Effect Transistor (SLCFET)

Robert S Howell,Eric J Stewart,R G Freitag,Justin Parke,Bettina Nechay,Harlan Cramer,Matthew King,Shalini Gupta,Jeff Hartman,Pavel Borodulin,Megan Snook,Ishan Wathuthanthri,Parrish Ralston,Karen Renaldo,H George Henry

Compound Semiconductor Integrated Circuit Symposium（2014）

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摘要

A low loss, high isolation, broadband RF switch has been developed using a novel type of field effect transistor structure that exploits the use of a super-lattice structure in combination with a three dimensional, castellated gate to achieve excellent RF switch performance. Using an AlGaN/GaN super-lattice epitaxial layer, this Super-Lattice Castellated Field Effect Transistor (SLCFET) was used to build 1-18 GHz SPDT RF switches. Measured insertion loss of the SPDT at 10 GHz was -0.4 dB, with -35 dB of isolation and -23 dB of return loss, along with a measured linearity OIP3 value 62 dBm and a P0.1dB of 34 dBm.

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关键词

iii-v semiconductors,uhf field effect transistors,aluminium compounds,gallium compounds,microwave field effect transistors,microwave switches,semiconductor epitaxial layers,semiconductor superlattices,wide band gap semiconductors,algan-gan,slcfet,spdt rf switches,frequency 1 ghz to 18 ghz,loss -0.4 db,loss -23 db,loss -35 db,low loss high isolation broadband rf switch,low loss high performance spdt,superlattice castellated field effect transistor,superlattice epitaxial layer,insertion loss,radio frequency,field effect transistors,switches

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