Low-frequency noise analysis of DRAM peripheral transistors with La cap

E Simoen,R Ritzenthaler,T Schram,M Aoulaiche,Alessio Spessot,Pierre C Fazan, H J Na, S G Lee,Y Son, K B Noh,Hiroaki Arimura,Naoto Horiguchi,A Thean, C Claeys

Solid-State and Integrated Circuit Technology（2014）

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摘要

In this paper, the impact of the thermal budget on the low-frequency (LF) noise of DRAM peripheral n-channel transistors with La cap implemented in the high-κ/metal gate stack is investigated. Confirmation of previous reports on the beneficial impact of La in-diffusion on the oxide trap density is obtained. At the same time, a peak in the oxide trap profile is demonstrated close to the SiO2/HfO2 interface.

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关键词

dram chips,high-k dielectric thin films,integrated circuit noise,lanthanum,dram peripheral transistors,lf noise,la,high-κ-metal gate stack,lanthanum cap,low-frequency noise analysis,oxide trap density,oxide trap profile,thermal budget

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