Investigation of HCI reliability in interdigitated LDMOS

Novel time-dependent kinetic model for interface trap formation is developed resulting in consideration of hot electron/hole injection in Interdigitated LDMOS. Proposed kinetic model replaces Si-H equation with Nit equation. HCI degradation of Interdigitated LDMOS is classified into two mechanisms. First mechanism is attributed to decreased electron densities due to electron trapping in interdigitated active region. Second mechanism occurs in accumulation region around side STI due to hot hole injection. First mechanism leads to an increase in RON upon stress, whereas second mechanism decreases RON.