Analytical study of the effect of asymmetric gate bias on the performance of double gate TFET

Parthasarathi Gupta,Jayita Das,Debasree Burman,Madhuchhanda Brahma,Hafizur Rahaman,Parthasarathi Dasgupta

Communications, Devices and Intelligent Systems（2012）

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摘要

In this paper we have investigated the effect of asymmetric gate bias on the performance of a double gated TFET structure. We have carried out an extensive simulation study on a recently reported novel electron hole bilayer TFET structure. The structure exhibits a high on current in the range of 50 μA/μm and the off current remains as low as 10-15 Ampere/μm. So a Ion/Ioff ratio of 10P10 can be achieved. Subthreshold swing has also been reduced to a value of 18mV/decade. The device principle and performance are investigated by 2D numerical simulation.

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关键词

field effect transistors,numerical analysis,tunnel transistors,2d numerical simulation,asymmetric gate bias,double gate tfet,electron hole bilayer,subthreshold swing,tunnel fet,ehbtfet,tfet,transfer characteristics

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