Reliability assessment of state-of-the-art GaN HEMT by means of cellular Monte Carlo Simulation

Marino, F.A.,Guerra, D.,Goodnick, S.M.,Saraniti, M.

Reliability Physics Symposium（2010）

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摘要

Here we discuss how Monte Carlo Simulations can be exploited to investigate reliability issues in GaN high electron mobility transistor (HEMT) devices. In particular, we report simulation results for high-frequency, high-power state-of-the-art GaN HEMTs focusing our analysis on the effects of that threading edge dislocations on the DC and RF performance of state of the art technologies. A complete characterization of an InGaN back - barrier device has been performed, and the influence of dislocation density on device performance analyzed. Furthermore, a device structure based on the N-face configuration is analyzed.

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关键词

iii-v semiconductors,monte carlo methods,dislocation density,gallium compounds,high electron mobility transistors,indium compounds,semiconductor device reliability,wide band gap semiconductors,hemt reliability assessment,ingan,n-face configuration,back-barrier device,cellular monte carlo simulation,disclocation density,high electron mobility transistor device,state of the art technologies,threading edge dislocation,dislocations,gan,monte carlo,high-electron mobility transistor (hemt),high-frequency,numerical simulation,monte carlo simulation,medical simulation,cutoff frequency,scattering,high frequency,distributed computing,materials,high electron mobility transistor

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