Low-voltage, low-loss, multi-Gb/s silicon micro-ring modulator based on a MOS capacitor

J Van Campenhout,Marianna Pantouvaki,P Verheyen,Shankar Kumar Selvaraja,G Lepage,Hui Yu, Wonkyoung Lee,J Wouters,D J Goossens, M Moelants,Wim Bogaerts,P Absil

Optical Fiber Communication Conference and Exposition（2012）

引用 53|浏览45

暂无评分

摘要

Optical modulation with 8dB extinction ratio and 3dB insertion loss is achieved by applying a 1.5-Vpp drive voltage to a 10-μm ring with embedded MOS capacitor. Open-eye diagrams are obtained at 3Gbps.

查看译文

关键词

mos capacitors,electro-optical modulation,elemental semiconductors,silicon,si,bit rate 3 gbit/s,embedded mos capacitor,extinction ratio,insertion loss,open-eye diagrams,optical modulation,silicon microring modulator,size 10 mum,voltage 1.5 v,erbium,optical waveguides

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要