Physics-based GaN HEMT transport and charge model: Experimental verification and performance projection
Electron Devices Meeting（2012）
摘要
A physics-based compact transport and charge model for GaN HEMTs has been developed. The model includes effects such as self-heating, non-linear access region behavior, electron-phonon interaction etc. The model is validated against fabricated devices and is used to evaluate fT improvements in short channel devices. The model is also a suitable base for GaN FET circuit simulation compact models.
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关键词
iii-v semiconductors,electron-phonon interactions,gallium compounds,high electron mobility transistors,semiconductor device models,wide band gap semiconductors,fet circuit simulation compact models,gan,electron-phonon interaction,nonlinear access region behavior,physics-based hemt transport model,physics-based compact transport-charge model,self-heating,short channel devices
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