Statistical measurement of random telegraph noise and its impact in scaled-down high-κ/metal-gate MOSFETs

Hiroshi Miki,Naoki Tega,Masanao Yamaoka,D J Frank,A K Bansal, Makoto Kobayashi, Kuoliang Cheng, C Demic,Z Ren, Shuanhu Wu, Jb Yau, Yingchun Zhu,Michael A Guillorn,D G Park, W Haensch,Effendi Leobandung,Kazuyoshi Torii

Electron Devices Meeting（2012）

引用 69|浏览50

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摘要

This paper presents results of statistical analysis of RTN in highly scaled HKMG FETs. A robust algorithm to extract multiple-trap RTN is proposed and applied to show that RTN can cause serious variation even when HKMG and undoped channel are introduced. We further focus on hysteretic behavior caused by RTN with time constants much longer than the circuit timescale. This reveals that RTN also induces novel instabilities such as short-term BTI and logic delay uncertainty. Extraction of RTN in SRAM arrays is also presented to discuss its impact on operational stability.

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关键词

mosfet,sram chips,circuit stability,random noise,semiconductor device measurement,semiconductor device noise,statistical analysis,sram array,highly scaled hkmg mosfet,highly scaled-down high-κ-metal-gate mosfet,hysteretic behavior,logic delay uncertainty,multiple-trap rtn extraction,operational stability,random telegraph noise,short-term bti,statistical measurement analysis,undoped channel

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