Impact of stray field on the switching properties of perpendicular MTJ for scaled MRAM
Electron Devices Meeting(2012)
摘要
For the first time, we show the stray field (Hs) from the pinned layer of perpendicular magnetic tunnel junctions (pMTJs) plays multiple important roles: its out-of-plane component degrades pinned layer stability of scaled MTJ, while its in-plane component assists spin-transfer torque switching. Through stray field engineering, one can retain its advantage, and minimized its detrimental effect. We also show that etching process plays a vital role in the stray-field engineering. Our pMTJ exhibits robust pinned layer performance, symmetrical R-H loop and balanced spin-torque switching current. The switching current of our pMTJ is ~60uA@20us for a 80nm diameter pMTJ.
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关键词
mram devices,etching,magnetic switching,magnetic tunnelling,perpendicular magnetic anisotropy,torque,balanced spin-torque switching current,detrimental effect,etching process,in-plane component,out-of-plane component degrades,perpendicular mtj,perpendicular magnetic tunnel junctions,pinned layer stability,robust pinned layer performance,scaled mram,size 80 nm,spin-transfer torque switching,stray field engineering,switching properties,symmetrical r-h loop
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