Demonstration of a reliable high-performance and yielding Air gap interconnect process

H J Yoo,S N Balakrishnan,J Bielefeld,M Harmes, H Hiramatsu,Sean King,Mauro J Kobrinsky,Brian Krist,Paul B Reese, V Ramachandrarao, Kristi M Singh, S K Suri, C Ward

Interconnect Technology Conference（2010）

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摘要

Capacitance coupling in copper low-k interconnects can be further reduced by implementing Air gaps in the intra-layer dielectric. This paper describes the evaluation of an integrated Air gap technology using 32 and 22 nm node technology vehicles. Electrical, reliability, and yield results are presented.

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关键词

integrated circuit interconnections,integrated circuit reliability,air gap interconnect process,intralayer dielectric,size 22 nm,size 32 nm,space technology,dielectric materials,dielectrics,etching,copper,numerical analysis,air gaps,capacitance,metals,resistance,reliability

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