High-Performance Ultrathin Body C-Sige Channel Fdsoi Pmosfets Featuring Sige Source And Drain: Vth Tuning, Variability, Access Resistance, And Mobility Issues

We report on ultrascaled (L-G = 23 nm) compressively strained SiGe-based FDSOI pMOSFET with ultrathin body. The devices have been fabricated using a high-K metal gate (TiN/HfSiON) process flow. SiGe channels (3.4 nm) have been epitaxially grown on 3-nm thick 300-mm SOI wafers and combined with embedded Si0.7Ge0.3(:B) raised source and drain (RSD) for Vth, p tuning and smart strain management. In-depth electrical characterizations point out the +120-mV Vth, p tuning, the excellent short-channel, and DIBL control (similar to SOI reference), and show for the first time extremely low variability for SiGe-based FD pMOSFETs. Furthermore, we investigate hole-transport properties as a function of gate length and temperature and demonstrate 60% R-access reduction with SiGe RSD and +330% mobility enhancement at 23-nm gate length with respect to 7-nm thick SOI reference.