Narrow Linewidth Surface-Etched DBR Lasers: Fundamental Design Aspects and Applications
Selected Topics in Quantum Electronics, IEEE Journal of（2013）
摘要
Surface-etched distributed Bragg reflector (SE-DBR) semiconductor lasers show potential for use in a variety of communications and spectroscopy applications requiring compact, single-mode, narrow linewidth, and tunable laser sources. This approach eliminates contamination issues associated with forming gratings by regrowth in Al-containing structures by using a single growth step and etching the grating after the entire epitaxy is grown. This paper reviews progress in the development of SE-DBR lasers using InGaAs-GaAs-AlGaAs and GaAs-AlGaAs separate confinement heterostructure. Fabrication techniques, design optimization studies, and device performance characteristics are overviewed. Applications of SE-DBRs toward multiwavelength arrays, THz generation via optical heterodyning, and alkali spectroscopy are discussed.
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关键词
iii-v semiconductors,aluminium compounds,distributed bragg reflector lasers,etching,gallium arsenide,heterodyne detection,indium compounds,laser beam applications,microwave photonics,optical arrays,optical fabrication,quantum well lasers,reviews,semiconductor heterojunctions,spectroscopy,terahertz wave generation,gaas-algaas,ingaas-gaas-algaas,se-dbr lasers,thz generation,alkali spectroscopy,communication application,compact single-mode narrow linewidth laser sources,design optimization,device performance characteristics,epitaxy,fabrication techniques,fundamental design,multiwavelength arrays,narrow linewidth surface-etched dbr lasers,optical heterodyning,separate confinement heterostructure,single growth step,spectroscopy applications,surface-etched distributed bragg reflector semiconductor lasers,tunable laser sources,narrow linewidth semiconductors lasers,optoelectronic circuits,quantum-well lasers,surface-etched distributed bragg reflectors (se-dbr)
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