On-chip dual-ring-oscillator-based random-fluctuation-measurement method for detecting lowest voltage in adaptive voltage scaling systems

Ono, G., Owa, M., Nakayama, M., Kanno, Y.

Solid State Circuits Conference（2012）

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摘要

A fully digital 40-nm-CMOS-based sensor using dual-ring oscillators for detecting random device fluctuation was developed. The sensor detects threshold voltage fluctuation of a MOSFET with precision of 1 mV with ±10% accuracy by calculating the squared sum of the differences in frequencies of the two ring oscillators. This sensing method does not require reference signals and achieves a smaller layout area than that of a conventional analog sensor.

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关键词

CMOS integrated circuits,MOSFET,oscillators,sensors,voltage measurement,MOSFET,adaptive voltage scaling systems,analog sensor,fully digital CMOS-based sensor,lowest voltage detection,on-chip dual-ring-oscillator-based random fluctuation-measurement method,random device fluctuation detection,size 40 nm,threshold voltage fluctuation,voltage 1 mV,

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