A charge-trapping memory structure featuring low-voltage high-speed operation and 250 °C retention

C Y Peng,W Q Zhang,Xiaowei Sun,Z G Liu,Sharon Cui, T P Ma,Lior Kornblum,M Eizenberg

Device Research Conference（2010）

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摘要

We have demonstrated that MAD-Al2O3 is an excellent candidate for the tunnel, as well as for the blocking dielectrics in NAND-type memories. Despite the limited minority carrier generation rate, the MANAS capacitors have already demonstrated superb memory characteristics, especially the 250°C retention, which we believe is exceptional and unprecedented. The process simplicity is also an attractive feature, making the MANAS structure viable for future generations of non-volatile memories.

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关键词

mis capacitors,nand circuits,alumina,elemental semiconductors,minority carriers,nitrogen compounds,random-access storage,silicon,al2o3-n2-al2o3-si,manas capacitors,nand-type memories,blocking dielectrics,charge-trapping memory structure,low-voltage high-speed operation,minority carrier generation rate,nonvolatile memories,temperature 250 degc,non volatile memory,dielectrics,low voltage

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