Influence of the process sequence and thermal budget on the strain of Si:C stressor layers formed by ion implantation

E Rosseel,C Ortolland,A Hikavyy,T Schram,A Falepin,T Hoffmann,B Douhard,Alain Moussa,W Vandervorst,M S Ameen,L M Rubin

Advanced Thermal Processing of Semiconductors（2010）

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摘要

We have studied n+ Si:C stressor formation by C or C7H7 ion implantation on blanket wafers for different integration schemes (so-called post Source/Drain versus post Source/Drain Extension integration). Using sheet resistance and High Resolution X-Ray Diffraction (HR-XRD) fitting parameters as the main metrics, we studied the influence of different implant/anneal parameters as well as the process sequence itself. For both integration schemes, suitable processing conditions were identified which result in acceptable sheet resistance and strain levels.

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关键词

x-ray diffraction,annealing,carbon,elemental semiconductors,ion implantation,silicon,hrxrd,si:c,annealing parameter,blanket wafer,fitting parameter,high resolution x-ray diffraction,integration scheme,sheet resistance,strain level,stressor formation,stressor layer,thermal budget,x ray diffraction,resistance

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