Heterogeneously integrated InP/SOI laser using double tapered single-mode waveguides through adhesive die to wafer bonding

M Lamponi,S Keyvaninia,F Pommereau,R Brenot,G De Valicourt,F Lelarge, G Roelkens,D Van Thourhout,S Messaoudene,J M Fedeli,G H Duan

Group IV Photonics（2010）

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摘要

An InP/Silicon hybrid laser based on double taper adiabatic mode transfer and BCB bonding is demonstrated, exhibiting nearly 1 mW output power at room temperature in pulsed operation regime. Such a laser enables potentially a low threshold current and a high power conversion efficiency.

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关键词

iii-v semiconductors,adhesive bonding,elemental semiconductors,indium compounds,integrated optics,optical fibre couplers,optical waveguides,quantum well lasers,silicon-on-insulator,wafer bonding,inp-si,double taper adiabatic mode transfer,double tapered single-mode waveguides,fiber coupled output power,heterogeneously integrated inp-soi laser,high power conversion efficiency,low threshold current,pulsed operation regime,single-mode adhesive die,temperature 293 k to 298 k,silicon on insulator,conversion efficiency,single mode,room temperature

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