A comparative study of fin-last and fin-first SOI FinFETs

Darsen Lu,Josephine Chang,Michael A Guillorn,Chunghsun Lin,Jeffrey B Johnson,P Oldiges,K Rim,M Khare,Wilfried Haensch

Simulation of Semiconductor Processes and Devices（2013）

引用 2|浏览38

暂无评分

摘要

Two FinFET fabrication processes are compared with simulation: the conventional fin-first process and the novel fin-last process. With the fin-last process, more longitudinal strain can be incorporated into the channel from source and drain SiGe stressor than fin-first. pFET mobility advantage is 15% at fully-strained condition and with silicon recess. Maintaining vertical junction uniformity is the main challenge for fin-last. However, its impact on parasitic resistance and capacitances are small. Vertical junction non-uniformity is improved with source and drain recess and doping optimization.

查看译文

关键词

mosfet,doping,semiconductor process modelling,silicon,silicon-on-insulator,finfet fabrication processes,soi finfet,doping optimization,drain recess,fin-first process,fin-last process,longitudinal strain,pfet mobility,semiconductor process simulation,silicon recess,source recess,vertical junction uniformity,fin-last,finfet,replacement metal gate process,soi,silicon on insulator

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要