Antimony selenide phase-change nanowires for memory application.

Synthesis and device characteristics of highly scalable antimony selenide nanowire-based phase transition memory are reported. Antimony selenide nanowires prepared using the metal-catalyst-free approach are single-crystalline and of high-purity. The nanowire memory can be repeatedly switched between high-resistance (similar to 10 M Omega) and low-resistance (similar to 1 k Omega) states which are attributed to amorphous and crystalline states, respectively.