Chemical control of semiconductor nanowire kinking and superstructure.

We show that methylgermane (GeH3CH3) can induce a transition from < 111 > to < 110 > oriented growth during the vapor-liquid-solid synthesis of Ge nanowires. This hydride-based chemistry is subsequently leveraged to rationally fabricate kinking superstructures based on combinations of < 111 > and < 110 > segments. The addition of GeH3CH3 also eliminates sidewall tapering and enables Ge nanowire growth at temperatures exceeding 475 degrees C, which greatly expands the process window and opens new avenues to create Si/Ge heterostructures.