Algan/Gan Hemt Nonlinear Model Fitting Including A Trap Model

A procedure for the extraction of a trap model is applied to an AlGaN/GaN-on-SiC HEMT. The trap model is then used in the extraction of a nonlinear device model. The resulting model accurately relates dc I-V with nonlinear behaviour which is crucial for accurately predicting the load-pull measurements. This modeling procedure can be integrated into a modelling/design flow enabling accurate prediction of device and circuit performance.