Defects, Disorder, and Strong Electron Correlations in Orbital Degenerate, Doped Mott Insulators.

We elucidate the effects of defect disorder and e-e interaction on the spectral density of the defect states emerging in the Mott-Hubbard gap of doped transition-metal oxides, such as Y1-xCaxVO3. A soft gap of kinetic origin develops in the defect band and survives defect disorder for e-e interaction strengths comparable to the defect potential and hopping integral values above a doping dependent threshold; otherwise only a pseudogap persists. These two regimes naturally emerge in the statistical distribution of gaps among different defect realizations, which turns out to be of Weibull type. Its shape parameter k determines the exponent of the power-law dependence of the density of states at the chemical potential (k - 1) and hence distinguishes between the soft gap (k >= 2) and the pseudogap (k < 2) regimes. Both k and the effective gap scale with the hopping integral and the e-e interaction in a wide doping range. The motion of doped holes is confined by the closest defect potential and the overall spin-orbital structure. Such a generic behavior leads to complex nonhydrogenlike defect states that tend to preserve the underlying C-type spin and G-type orbital order and can be detected and analyzed via scanning tunneling microscopy.