Improved thermal management of InP transistors in transferred-substrate technology with diamond heat-spreading layer

A method to improve the thermal management of indium phosphide (InP) double-hetero bipolar transistors (DHBTs) fabricated in a transferred-substrate technology is presented. A vapour-phase deposited diamond layer acting as a heat spreader is heterogeneously integrated into the vertical layer stack. It is observed that the diamond layer reduces the thermal resistance of a 0.8 × 5 μm2 single emitter...