Nitride-Based Blue Light-Emitting Diodes Grown With InN/GaN Matrix Quantum Wells

Chenghuang Kuo,Y K Fu,L C Chang,Y A Chen

IEEE Journal of Quantum Electronics（2014）

引用 6|浏览10

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摘要

Nitride-based light-emitting diodes (LEDs) grown with a structure of InN/GaN matrix quantum-wells (QWs) using metal-organic chemical vapor deposition are fabricated and characterized. The InN/GaN matrix QWs can significantly enhance the formation of phase-separated In-rich regions. Under an injection current of 500 A/cm2, the LED output power can be enhanced by 26%, and the efficiency droop can be...

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关键词

Gallium nitride,Light emitting diodes,Indium,Strain,Power generation,Quantum wells

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