MOVPE growth of AIIIBV‐N semiconductor compounds for photovoltaic applications

The present work presents the influence of the growth parameters on the structural and optical properties of undoped GaAsN epilayers and triple quantum wells 3 x InGaAsN/GaAs obtained by atmospheric pressure metal organic vapour phase epitaxy APMOVPE. The structures were examined using high resolution X-Ray diffraction HRXRD, contactless electroreflectance CER, photocurrent PC and Raman RS spectroscopies. The influence of the growth temperature and the gas phase composition on the material quality and alloy composition of the investigated structures as well as the growth and calibration characteristics are presented and discussed. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)