Deep level transient spectroscopic study of oxygen implanted melt grown ZnO single crystal

Deep level traps in melt grown ZnO single crystal created by oxygen implantation and subsequent annealing in air were studied by deep level transient spectroscopy measurement between 80 and 300 K. The E-C-0.29 eV trap (E3) was the dominant peak in the as-grown sample and no new defects were created in the as-O-implanted sample. The single peak feature of the deep level transient spectroscopy (DLTS) spectra did not change with the annealing temperature up to 750 degrees C, but the activation energy decreased to 0.22 eV. This was explained in terms of a thermally induced defect having a peak close to but inseparable from the original 0.29 eV peak. A systematic study on a wide range of the rate window for the DLTS measurement successfully separated the Arrhenius plot data originated from different traps. It was inferred that the E3 concentration in the samples did not change after the O-implantation. The traps at E-C-0.11, E-C-0.16 and E-C-0.58 eV were created after annealing. The E-C-0.16 eV trap was assigned to an intrinsic defect. No DLTS signal was found after the sample was annealed to 1200 degrees C.