Generation of a boron ion beam in a modified ion source for semiconductor applications

Presented here are results of experimental studies on the production of intense beams of boron ions using a modified Bernas-Calutron ion source. Instead of using the conventional boron-trifluoride gas, a solid lithium-boron-tetrafluoride compound was heated to release boron-trifluoride. For optimum ion source parameters the measured 25-41 mA of total ion beam current was composed of 70% singly charged and about 1% doubly charged boron ions. (c) 2006 American Institute of Physics.