Electric Field Effect On A Double Mgo Cofeb-Based Free Layer

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS(2016)

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摘要
We study the electric field (EF) effect on MgO/CoFeB/Ta/CoFeB/MgO free layers by varying the thickness of the top MgO layer. The two CoFeB/MgO interfaces oppose the change in magnetic anisotropy from each other and this can be understood by considering the voltage drop as well as the efficiency of the anisotropy modulation from both interfaces. These results are proven by monitoring both coercivity and anisotropy field as a function of the applied EF. From the fit to the model, we show that the bottom CoFeB/MgO interface has a higher EF efficiency than the top interface. (C) 2015 Elsevier B.V. All rights reserved.
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关键词
Electric field effect, Voltage controlled anisotropy, Perpendicular magnetic anisotropy, Magnetic tunnel junction, Double MgO
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