YBa2Cu3O7−x THIN FILMS GROWN ON SAPPHIRE WITH EPITAXIAL YTTRIA-STABILIZED ZrO2 BUFFER LAYER

We have successfully fabricated high-quality YBa2Cu3O7−x (YBCO) thin films grown on sapphire with epitaxial Yttria-Stabilized ZrO2 (YSZ) buffer layer by pulsed laser deposition. X-ray diffraction and Auger depth profile were used to characterize these thin films. The values of zero-resistance temperature Tco and critical current density Jc (at 77 K) of c-axis oriented YBCO thin film with 500 A-YSZ buffer layer were 91 K and 2.2×106A/cm2, respectively. The Auger depth profile showed that no obvious diffusion occurred between the buffer layer and the YBCO film. The influence of substrate temperature and thickness of buffer layer has been investigated.