Picosecond Photoluminescence Dynamics in an InGaAs/GaAs Quantum-Well Heterostructure
Semiconductors (Woodbury, NY)(2012)
Abstract
The results of experimental studies of the subpicosecond relaxation dynamics of photoexcited charge carriers in an In 0.22 Ga 0.78 As/GaAs quantum-well heterostructure are reported. From photoluminescence studies of the structure by the upconversion technique, the cooling rate of charge carriers in the quantum well and the time of charge-carrier trapping into the well are estimated to be ∼1 ps at 300 K and at ∼6.5 ps at 10 K.
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Key words
GaAs,Charge Carrier,Acoustic Phonon,Trapping Time,Femtosecond Laser Radiation
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