Local interdiffusion at buried TiN/Si interfaces with scanning probes

This study proposes a novel scanning-probe-based approach to induce local interdiffusion at buried interfaces. Scanning-probe oxidation (SPO) was performed on a thin TiN layer on a Si substrate with ethanol menisci. The diffusion of Si and Ti at the interface was observed using Auger electron analysis and photoelectron spectroscopy and mapping. The results of photoelectron spectroscopy revealed that SPO converted the TiN layer into TiNxOy. The significant conductivity of TiNxOy was verified by conductive atomic force microscopy. Joule heating in the conductive TiNxOy induced Si diffusion in the amorphous TiNxOy layer.