On the Origin of Low-Resistance State Retention Failure in HfO 2 -Based RRAM and Impact of Doping/Alloying

We study in detail the impact of alloying HfO2 with Al (Hf1_xAl2xO2+x) on the oxide-based resistive random access memory (RRAM) (OxRRAM) thermal stability through material characterization, electrical measurements, and atomistic simulation. Indeed, migration of oxygen atoms inside the dielectric is at the heart of OxRRAM operations. Hence, we performed comprehensive diffusion barrier calculations ...